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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R DESCRIPTION *With TO-3 package *DARLINGTON APPLICATIONS *Automotive ignition applications *Inverters circuits for motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER BU931R Collector-base voltage BU932R BU931R VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-emitter voltage BU932R Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC125 Open collector Open base 500 5 15 30 1 5 175 200 -40~200 V A A A A W Open emitter 450 450 V CONDITIONS VALUE 400 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage BU931R IC=100mA ; IB=0 BU932R IC=7A; IB=70mA IC=8A; IB=100mA CONDITIONS SYMBOL BU931R BU932R MIN 400 TYP. MAX UNIT VCEO V 450 1.6 V VCEsat-1 Collector-emitter saturation Voltage Only for BU931R Collector-emitter saturation voltage BU931R BU932R VCEsat-2 1.8 IC=8A; IB=150mA IC=10A; IB=250mA IC=8A; IB=100mA 2.2 BU932R IC=8A; IB=150mA IC=10A; IB=250mA VCE=400V ;IB=0 1.0 BU932R BU931R BU932R VCE=450V ;IB=0 VCE=400V ;VBE=0 TC=125 VCE=450V ;VBE=0 TC=125 VEB=5V; IC=0 IC=5A ; VCE=10V IF=10A 300 2.8 1.0 5.0 1.0 5.0 50 2.5 1.8 V VCEsat-3 Collector-emitter saturation Voltage Only for BU931R Base-emitter saturation voltage BU931R V VBEsat-1 V VBEsat-2 Base-emitter saturation voltage Only for BU931R Collector cut-off current BU931R V ICEO mA ICES Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage mA IEBO hFE VF mA V Switching times ts tf Storage time Fall time IC=7A ;IB=70mA ;VBE=0;RBE=47@ VCC=12V,Vclamp=300V;L=7mH 15 0.5 s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU931R BU932R Fig.2 Outline dimensions 3 |
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